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 MMDT4146
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * * Complementary Pair One 4124-Type NPN, One 4126-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package
SOT-363
A
C2 B1 E1
NEW PRODUCT
Dim A B
BC
C1
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25
KXX
E2 B2
C D F H J
M
0.65 Nominal
Mechanical Data
* * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K12 Weight: 0.006 grams (approx.)
K
H
K L M
J
D
F
L
E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section
All Dimensions in mm
Maximum Ratings, NPN 4124 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA NPN 4124 Section 60 40 6.0 200 200 625 Unit V V V mA mW K/W
Maximum Ratings, PNP 4126 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA PNP 4126 Section -40 -40 -5.0 -200 200 625 Unit V V V mA mW K/W
Notes:
1. Valid provided that terminals are kept at ambient temperature. Total device dissipation. 2. Maximum combined dissipation.
DS30162 Rev. D-1
1 of 2
MMDT4146
NEW PRODUCT
Electrical Characteristics, NPN 4124 Section
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Cobo Cibo hfe fT hFE VCE(SAT) VBE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Symbol
@ TA = 25C unless otherwise specified Min 30 25 5.0 3/4 3/4 120 60 3/4 3/4 3/4 3/4 120 300 Max 3/4 3/4 6.0 50 50 360 3/4 0.30 0.95 4.0 8.0 480 3/4 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 20V, IE = 0V VEB = 3.0V, IC = 0V IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz
3/4 V V pF pF 3/4 MHz
Electrical Characteristics, PNP 4126 Section
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: 3. Pulse test: Pulse width 300ms, duty cycle 2%. Cobo Cibo hfe fT NF hFE VCE(SAT) VBE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Symbol
@ TA = 25C unless otherwise specified Min -25 -25 -4.0 3/4 3/4 120 60 3/4 3/4 3/4 3/4 120 250 3/4 Max 3/4 3/4 3/4 -50 -50 360 3/4 -0.40 -0.95 4.5 10 480 3/4 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -20V, IE = 0V VEB = -3.0V, IC = 0V IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -50mA, IB = -5.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz
3/4 V V pF pF 3/4 MHz dB
DS30162 Rev. D-1
2 of 2
MMDT4146


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